2008 .9. 11 1/2 semiconductor technical data pg03jsusc single line tvs diode for esd protection in portable electronics revision no : 2 protection in portable electronics applications. features h 350 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 34a(tp=8/20 s) h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects on i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 350 w peak pulse current (tp=8/20 s) i pp 34 a operating temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 4.0 - - v reverse leakage current i r v rwm =3.3v - - 125 a clamping voltage v c i pp =5a, tp=8/20 s - - 8.8 v i pp =34a, tp=8/20 s - - 10.9 junction capacitance c j v r =0v, f=1mhz - - 500 pf
2008. 9 .11 2/2 pg03jsusc revision no : 2
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